STRUCTURAL AND ELECTRONIC STUDY OF CU2S THIN FILMS FOR THE POTENTIAL MANUFACTURE OF PHOTOVOLTAIC SOLAR CELLS
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Marcos Montemayor said…
Nice work!
Nicolas Zarate said…
Interesting results., other characterizatíons are missing and with that it would be more than a good work.
Ivan Palacios said…
Very good work!! Whats was the growth pressure and thermal annealing?
Lizz G. Luza said…
Good morning. In this work, Cu2S films were grown on glass substrates by direct current sputtering to different thicknesses at room temperature and under a pressure of 4.7 x10-2 mbar. Then, the films were heat treated at 100,200 and 300 celcius degrees for 1 hour in high vacuum 1x10-6 mbar.
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Whats was the growth pressure and thermal annealing?
In this work, Cu2S films were grown on glass substrates by direct current sputtering to different thicknesses at room temperature and under a pressure of 4.7 x10-2 mbar. Then, the films were heat treated at 100,200 and 300 celcius degrees for 1 hour in high vacuum 1x10-6 mbar.