What absorption values are obtained when the argon flow and thickness are varied? please
Chandra Kumar said…
Dear Anonymous NiOx layer will be pest electrode with thickness of about XX nm was separated by a XXnm SiO2 insulator layer on the Si substrate, Actually i make a small correction in your question ,i use in . Schottky junction solar cells with different 2d material such as graphene or MOS2
chandra kumar said…
Dear Ricardo Hincapié O. Thanku very much for visiting poster section
Just i make small correction in your question ,in this work flow rate of argon was fixed at 25 SCCM while thickness of nickel layers were varied .It is much interesting work how nickel thin film transform into non-stoichiometric nickel oxide (NiOx) thin films
in this particular work absorption edge were 335(± 0.5) nm for sample A1 while 353(± 0.5) for sapmle A2 ,one intresting part of research is that when we were increased thickness or sputtering time we will get minimum band gap bacause size increased with nominal thickness,,,here for sample A1 i got band gap Eg=3.7eV which is higher than bulk band gap(Eg=3.64eV) indicate particle size of NiOx thin film is in nano range while in case of sample A2 we got band gap Eg=3.51eV which is lower than bulk band gap indicate NiOx thin film is moved in micro ranged (more than 100nm particle size).....further we can discuss about future work through email
Comments
Actually i make a small correction in your question ,i use in . Schottky junction solar cells with different 2d material such as graphene or MOS2
Just i make small correction in your question ,in this work flow rate of argon was fixed at 25 SCCM while thickness of nickel layers were varied .It is much interesting work how nickel thin film transform into non-stoichiometric nickel oxide (NiOx) thin films
in this particular work absorption edge were 335(± 0.5) nm for sample A1 while 353(± 0.5) for sapmle A2 ,one intresting part of research is that when we were increased thickness or sputtering time we will get minimum band gap bacause size increased with nominal thickness,,,here for sample A1 i got band gap Eg=3.7eV which is higher than bulk band gap(Eg=3.64eV) indicate particle size of NiOx thin film is in nano range while in case of sample A2 we got band gap Eg=3.51eV which is lower than bulk band gap indicate NiOx thin film is moved in micro ranged (more than 100nm particle size).....further we can discuss about future work through email
with best regards
Chandra Kumar
UCN ANF Chile